elektronische bauelemente SMS318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 28-apr-2011 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 so t -23 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage mechanical data ? case: sot-23 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: solderable per mil-std-202, method 208 ? lead free plating(matte tin finish annealed over alloy 42 leadframe) ? terminal connections: see diagram ? weight: 0.008 grams (approximate) marking product marking code SMS318 h03 / ss package information package mpq leader size sot-23 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 50 v drain-gate voltage(r gs Q 20k ? ) v dgr 50 v continuous gate-source voltage v gss 20 v continuous drain current i d 220 ma thermal resistance rating power dissipation 1 p d 300 mw thermal resistance, junction to ambient 1 r ja 417 c/w junction and storage temperature range t j , t stg -55~150 c millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente SMS318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 28-apr-2011 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions off characteristics 2 drain-source breakdown voltage bv dss 50 - - v v gs = 0, i d = 250 a zero gate voltage drain current i dss - - 0.5 a v gs = 0v, v ds = 50v gate-body leakage current i gss - - 100 na v gs =20v, v ds = 0v on characteristics 2 gate threshold voltage v gs(th) 0.5 - 2.0 v v ds = v gs , i d =250 a static drain-source on resistance r ds(on) - - 3.5 ? v gs =10v, i d =0.22a forward transconductance g fs 100 - - ms v ds =25v, , i d =0.2a, f=1.0khz dynamic characteristics input capacitance c iss - - 50 pf output capacitance c oss - - 25 pf reverse transfer capacitance c rss - - 8.0 pf v ds =10v, v gs =0, f=1mhz switching characteristics turn-on delay time td (on) - - 20 turn-off delay time td (off) - - 20 ns v dd =30v, ,i d =0.2a, r gen =50 ? , notes: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout. 2. short duration pulse test us ed to minimize self-heating effect.
elektronische bauelemente SMS318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 28-apr-2011 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMS318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 28-apr-2011 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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